MTP10N10ELG

MTP10N10ELG, Power MOSFET, 10 Amps, 100 Volts, TO-220

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Price:: US $0.78~0.93 / piece [Get Latest Price]

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	US $0.78~0.93

PartNumber:: MTP10N10ELG

Brand:: ON Semiconductor - ON | Pack: DIP | D/C: 11+

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Products Upload time: 2012-06-04

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Part Number:MTP10N10ELG
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Product Summary

The Power MOSFET MTP10N10ELG is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP10N10ELG is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Parametrics

MTP10N10ELG absolute maximum ratings: (1)Drain.to.Source Voltage, VDSS: 100 Vdc; (2)Drain.to.Gate Voltage (RGS = 1.0Ω), VDGR: 100 Vdc; (3)Gate.to.Source Voltage: Continuous, VGS: ±15 Vdc; Non.Repetitive (tp≦10 ms), VGSM: ±20 Vpk; (4)Drain Current: Continuous @ TC = 25℃, ID: 10 Adc; Continuous @ TC = 100℃, ID: 6.0 Adc; Single Pulse (tp≦10 μs), IDM: 35 Apk; (5)Total Power Dissipation @ TC = 25℃, PD: 40 Watts; Derate above 25℃: 0.32 W/°C; Total Power Dissipation @ TC = 25℃: 1.75 Watts; (6)Operating and Storage Temperature Range TJ, Tstg: -55 to 150℃.

Features

MTP10N10ELG features: (1)Avalanche Energy Specified; (2)Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; (3)Diode is Characterized for Use in Bridge Circuits; (4)IDSS and VDS(on) Specified at Elevated Temperature; (5)Pb-Free Package is Available.