Product Summary

The IPB100N10S3-05 is a OptiMOS-T Power Transistor.

Parametrics

IPB100N10S3-05 absolute maximum ratings: (1)Continuous drain current, ID TC=25℃, VGS=10 V: 100 A; TC=100℃, VGS=10 V: 100 A; (2)Pulsed drain current, ID,pulse, TC=25℃: 400 A; (3)Avalanche energy, single pulse, EAS, ID=50A: 1445 mJ; (4)Avalanche current, single pulse, IAS: 100 A; (5)Gate source voltage, VGS: ±20 V; (6)Power dissipation, Ptot TC=25℃: 300 W; (7)Operating and storage temperature T j, T stg: -55 to +175℃.

Features

IPB100N10S3-05 features: (1)N-channel - Enhancement mode; (2)Automotive AEC Q101 qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green product (RoHS compliant); (6)100% Avalanche tested.

Diagrams

IPB100N10S3-05 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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610-1000: $0.91
1000-2000: $0.87
2000-5000: $0.83
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(USD)		 Quantity
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Data Sheet
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Data Sheet
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450-500: $0.82
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