Product Summary

The IPB100N10S3-05 is a OptiMOS-T Power Transistor.

Parametrics

IPB100N10S3-05 absolute maximum ratings: (1)Continuous drain current, ID TC=25℃, VGS=10 V: 100 A; TC=100℃, VGS=10 V: 100 A; (2)Pulsed drain current, ID,pulse, TC=25℃: 400 A; (3)Avalanche energy, single pulse, EAS, ID=50A: 1445 mJ; (4)Avalanche current, single pulse, IAS: 100 A; (5)Gate source voltage, VGS: ±20 V; (6)Power dissipation, Ptot TC=25℃: 300 W; (7)Operating and storage temperature T j, T stg: -55 to +175℃.

Features

IPB100N10S3-05 features: (1)N-channel - Enhancement mode; (2)Automotive AEC Q101 qualified; (3)MSL1 up to 260℃ peak reflow; (4)175℃ operating temperature; (5)Green product (RoHS compliant); (6)100% Avalanche tested.

Diagrams

IPB100N10S3-05 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB100N10S3-05
IPB100N10S3-05
Infineon Technologies
MOSFET OptiMOS -T PWR TRANS 100V 100A
Data Sheet
0-610: $1.09
610-1000: $0.91
1000-2000: $0.87
2000-5000: $0.83
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPB100N04S2-04
IPB100N04S2-04
Infineon Technologies
MOSFET OptiMOS PWR TRANST 40V 100A
Data Sheet
0-610: $1.15
610-1000: $0.97
1000-2000: $0.92
2000-5000: $0.88
IPB100N04S2L-03
IPB100N04S2L-03
Infineon Technologies
MOSFET OptiMOS PWR TRANST 40V 100A
Data Sheet
0-610: $1.15
610-1000: $0.97
1000-2000: $0.92
2000-5000: $0.88
IPB100N04S3-03
IPB100N04S3-03
Infineon Technologies
MOSFET N-CH 40 V 100A
Data Sheet
0-1: $1.49
1-10: $1.27
10-100: $1.04
100-250: $0.80
IPB100N04S4-H2
IPB100N04S4-H2
Infineon Technologies
MOSFET N-Channel 40V MOSFET
Data Sheet
0-450: $0.72
450-500: $0.56
500-1000: $0.47
1000-2000: $0.43
IPB100N06S2-05
IPB100N06S2-05
Infineon Technologies
MOSFET OptiMOS PWR TRANST 55V 100A
Data Sheet
0-580: $0.94
580-1000: $0.77
1000-2000: $0.72
2000-5000: $0.70
IPB100N06S2L-05
IPB100N06S2L-05
Infineon Technologies
MOSFET OptiMOS PWR TRANS 55V 100A
Data Sheet
0-580: $0.94
580-1000: $0.77
1000-2000: $0.72
2000-5000: $0.70