(Hong Kong)
Product Summary
The Power MOSFET MTP12P10G is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Parametrics
MTP12P10G absolute maximum ratings: (1)Drain.to.Source Voltage, VDSS: 100 Vdc; (2)Drain.to.Gate Voltage (RGS = 1.0Ω), VDGR: 100 Vdc; (3)Gate.to.Source Voltage: Continuous, VGS: ±20 Vdc; Non.Repetitive (tp≦50μs), VGSM: ±40 Vpk; (4)Drain Current: Continuous: 12.0 Adc; Single Pulse (tp≦10 μs), IDM: 35 Apk; (5)Total Power Dissipation, PD: 75 Watts; Derate above 25℃: 0.6 W/℃; (6)Operating and Storage Temperature Range TJ, Tstg: -65 to 150℃.
Features
MTP12P10G features: (1)Silicon Gate for Fast Switching Speeds - Switching Times Specified; (2)at 100℃; (3)Designer Data - IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature; (4)Rugged - SOA is Power Dissipation Limited; (5)Source-to-Drain Diode Characterized for Use With Inductive Loads; (6)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MTP12P10G |
ON Semiconductor |
MOSFET 100V 12A P-Channel |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
 |
MTP102-16B-E |
Seiko Instruments |
Printers 110 Dots Dim. 48x31x13.8 |
Data Sheet |
Negotiable |
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 |
MTP10N10E |
Other |
|
Data Sheet |
Negotiable |
|
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|
MTP10N10EL |
ON Semiconductor |
MOSFET 100V 10A Logic Level |
Data Sheet |
Negotiable |
|
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|
MTP10N15 |
Other |
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Data Sheet |
Negotiable |
|
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|
MTP1149 |
Apem |
Tactile & Jog Switches SW TACT SPST 0.05A 12VDC |
Data Sheet |
|
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MTP12N06 |
Other |
|
Data Sheet |
Negotiable |
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